Optimization of the Growth of the Van der Waals Materials Bi<sub>2</sub>Se<sub>3</sub> and (Bi<sub>0.5</sub>In<sub>0.5</sub>)<sub>2</sub>Se<sub>3</sub> by Molecular Beam Epitaxy
نویسندگان
چکیده
The naturally existing chalcogenide Bi2Se3 is topologically nontrivial due to the band inversion caused by strong spin-orbit coupling inside bulk of material. surface states are spin polarized, protected time-inversion symmetry, and thus robust scattering nonmagnetic defects. A high-purity topological insulator thin film can be easily grown via molecular beam epitaxy (MBE) on various substrates enable novel electronics, optics, spintronics applications. However, unique state properties have historically been limited quality, which evaluated crystallinity, morphology, transport data. Here we propose investigate different MBE growth strategies improve quality films MBE. Based passivation status, classified into two categories, self-passivated or unpassivated, determine optimal mechanisms representative sapphire GaAs, respectively. For status determines dominant mechanism. In end, growths trivial (Bi0.5In0.5)2Se3 (BIS) GaAs investigated following protocols proposed.
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ژورنال
عنوان ژورنال: Crystal Growth & Design
سال: 2021
ISSN: ['1528-7483', '1528-7505']
DOI: https://doi.org/10.1021/acs.cgd.1c00663